DataVXAdvanced MaterialsPaper
journal article·2014-12

Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)

Nan Guo, Weida Hu, Lei Liao, SenPo Yip, Johnny C. Ho, Jinshui Miao, Zhi Zhang, Jin Zou, Tao Jiang, Shiwei Wu, Xiaoshuang Chen, Wei Lu

Advanced Materials· Volume 26· Issue 48
Publisher page
Source abstract

Abstract

On page 8203, W. D. Hu, L. Liao, W. Lu, and co-workers develop a new way to realize the photogating effect on core/shell-like InAs nanowire transistors for highly efficient photodetection. Under light illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to regulate the core conductance significantly. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Nanowire Synthesis and Applications

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Affiliations

National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China

Department of Physics and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 China

Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR China

Material Engineering The University of Queensland St Lucia QLD 4072 Australia

Centre for Microscopy and Microanalysis The University of Queensland St Lucia QLD 4072 Australia

State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China

References

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