Nonlinear Electron‐Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide
Source abstract
Abstract
With VO2, a classic strongly correlated oxide material, a model semiconductor CdS is stretched and its electron-lattice interaction in a nonlinear manner is modulated. Optical spectroscopy is applied to probe the electronic band structure-associated parameters which is explained by the theoretical prediction based on k·p method and microscopy study. The research provides a new avenue on dynamic straining engineering. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA
Department of Physics Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA
Department of Materials Science and Engineering the Ohio State University Columbus OH 43212 USA
Funding
US National Science Foundation
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