Field‐Effect Transistors: Ultrathin MXene‐Micropattern‐Based Field‐Effect Transistor for Probing Neural Activity (Adv. Mater. 17/2016)
Source abstract
Abstract
A field-effect transistor (FET) based on ultrathin Ti3C2–MXene micropatterns is developed by C. Zhi, P. Shi, and co-workers, as described on page 3333. The FET can be utilized for label-free probing of small molecules in typical biological environments, e.g., for fast detection of action potentials in primary neurons. This device is produced with a microcontact printing technique, harnessing the unique advantages for easy fabrication.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · MXene and MAX Phase Materials · Neuroscience and Neural Engineering
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Affiliations
Department of Mechanical and Biomedical Engineering City University of Hong Kong 83 Tat Chee Ave Kowloon Hong Kong SAR 999077 P. R. China
Department of Physics and Material Science City University of Hong Kong 83 Tat Chee Ave Kowloon Hong Kong SAR 999077 P. R. China
Shenzhen Research Institute City University of Hong Kong Shenzhen 518057 P. R. China
References
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