Correlated Compositions, Structures, and Photoluminescence Properties of Gallium Nitride Nanoparticles

Introducing nitrogen vacancies into gallium nitride nanoparticles might allow tuning optoelectronic properties. Comparing experimental and theoretical data establishes that an observed broad chemical shift distribution in 71Ga MAS NMR spectra results from chemical inhomogeneities at the atomic level within GaN nanoparticles, which can be correlated with the intensity of blue band edge related photoluminescence. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.