journal article·2011-02-22

Reinforced Self‐Assembled Nanodielectrics for High‐Performance Transparent Thin Film Transistors

Jun Liu, Jonathan W. Hennek, D. Bruce Buchholz, Young‐geun Ha, Sujing Xie, Vinayak P. Dravid, Robert P. H. Chang, Antonio Facchetti, Tobin J. Marks

Advanced Materials· Volume 23· Issue 8
Publisher page

Abstract

Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities ∼140 cm2/V·s and low operating voltages ∼1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (48)

Show source-provided references
1. 10.1002/978047071060910.1002/9780470710609 ↗
2. 10.1126/science.108527610.1126/science.1085276 ↗
3. 10.1126/science.108321210.1126/science.1083212 ↗
4. 10.1038/nature0309010.1038/nature03090 ↗
5. 10.1016/j.tsf.2005.01.06610.1016/j.tsf.2005.01.066 ↗
6. 10.1007/s10832-006-6710-910.1007/s10832-006-6710-9 ↗
7. 10.1063/1.154267710.1063/1.1542677 ↗
8. 10.1063/1.155399710.1063/1.1553997 ↗
9. 10.1063/1.184328610.1063/1.1843286 ↗
10. 10.1063/1.212089510.1063/1.2120895 ↗
11. 10.1038/nmat175510.1038/nmat1755 ↗
12. 10.1002/adma.20080358410.1002/adma.200803584 ↗
13. 10.1021/ja903886r10.1021/ja903886r ↗
14. 10.1149/1.304981910.1149/1.3049819 ↗
15. 10.1063/1.322555510.1063/1.3225555 ↗
16. 10.1088/0022-3727/40/5/00410.1088/0022-3727/40/5/004 ↗
17. 10.1149/1.290386610.1149/1.2903866 ↗
18. 10.1002/adma.20060096110.1002/adma.200600961 ↗
19. 10.1039/b822893k10.1039/b822893k ↗
20. 10.1021/am900321f10.1021/am900321f ↗
21. 10.1073/pnas.050102710210.1073/pnas.0501027102 ↗
22. 10.1002/adma.20050051710.1002/adma.200500517 ↗
23. 10.1002/adma.20080326710.1002/adma.200803267 ↗
24. 10.1088/0957-4484/18/15/15520110.1088/0957-4484/18/15/155201 ↗
25. 10.1021/nl07253810.1021/nl072538 ↗
26. 10.1063/1.233674410.1063/1.2336744 ↗
27. J.Liu D. B.Buchholz R. P. H.Chang T. J.Marks unpublished observations.
28. 10.1021/ja801309g10.1021/ja801309g ↗
29. Chrisey D. B. · 1994
30. 10.1088/0953-8984/20/26/26400510.1088/0953-8984/20/26/264005 ↗
31. 10.1557/S088376940004059810.1557/S0883769400040598 ↗
32. 10.1039/b207644f10.1039/b207644f ↗
33. 10.1063/1.312695610.1063/1.3126956 ↗
34. 10.1063/1.290470410.1063/1.2904704 ↗
35. 10.1109/TED.2009.202133910.1109/TED.2009.2021339 ↗
36. 10.1143/JJAP.44.L119310.1143/JJAP.44.L1193 ↗
37. 10.1063/1.188043410.1063/1.1880434 ↗
38. 10.1063/1.234524310.1063/1.2345243 ↗
39. Ju S. · Appl. Phys. Lett. · 2008 · 92 · 2104
40. 10.1063/1.294758610.1063/1.2947586 ↗
41. 10.1007/s10832-006-6656-y10.1007/s10832-006-6656-y ↗
42. 10.1016/j.tsf.2004.11.22310.1016/j.tsf.2004.11.223 ↗
43. 10.1143/JJAP.45.430310.1143/JJAP.45.4303 ↗
44. 10.1021/ja039232z10.1021/ja039232z ↗
45. 10.1063/1.220372210.1063/1.2203722 ↗
46. 10.1002/adma.20030572710.1002/adma.200305727 ↗
47. 10.1063/1.296978010.1063/1.2969780 ↗
48. 10.1063/1.311256610.1063/1.3112566 ↗