All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

Adv. Mater. 2021, 33, 2109521 DOI: 10.1002/adma.202109521 According to the author's feedback, the synthesis of 1T′-WS2 was explored by two different methods. After a carefully check, the 1T′-WS2 used in this work was synthesized by the revised method as shown below (revised parts are marked in bold): The 1T′-WS2 single crystals were synthesized by the following method similar to the referenced one.[8,36] Firstly, the K2WO4 powder (Aladdin, 99.5% purity) and sulfur powder (Sigma-Aldrich, 99.5% purity) are fully ground in a molar ratio of 1:4. Then, the grounded powder was sealed in a quartz ampoule, and the moisture and oxygen in the quartz ampoule were removed by a vacuum pump for 10 min. Next, the quartz ampoule was heated at 500 °C for 96 h to prepare the 1T′-WS2 precursor. Then, 0.5 g precursor was put into the middle of a single zone furnace. The synthesis conditions include the synthesis temperature of 750 °C, the 20/80 sccm H2/Ar mixed flow, and the growth duration of 10 h. The K residue removal from the synthesized product requires two solution soaking, including deionized (DI) water for 24 h and the iodine (I2, 1.5 g, Tokyo Chemical Industry Company Limited)/acetonitrile (50 mL, anhydrous, 99.8% purity) solution for 5 h. The authors assert, as confirmed by many experiments, that the revised recipe can repeat the synthesis and verified the results. The arguments and conclusions of the original article are not affected. The authors apologize for any inconvenience caused. [8] Z. Lai, Q. He, T. H. Tran, D. V. M. Repaka, D. D. Zhou, Y. Sun, S. Xi, Y. Li, A. Chaturvedi, C. Tan, B. Chen, G. H. Nam, B. Li, C. Ling, W. Zhai, Z. Shi, D. Hu, V. Sharma, Z. Hu, Y. Chen, Z. Zhang, Y. Yu, X. Renshaw Wang, R. V. Ramanujan, Y. Ma, K. Hippalgaonkar, H. Zhang, Nat. Mater. 2021, 20, 1113. [36] a) Z. Lai, Y. Yao, S. Li, L. Ma, Q. Zhang, Y. Ge, W. Zhai, B. Chi, B. Chen, L. Li, L. Wang, Z. Zheng, L. Gu, Y. Du, H. Zhang, Adv. Mater. 2022, 34, 2201194; b) Y. Yu, G. Nam, Q. He, X. Wu, K. Zhang , Z. Yang, J. Chen, Q. Ma, M. Zhao, Z. Liu, F. Ran, X. Wang, H. Li, X. Huang , B. Li, Q. Xiong, Q. Zhang, Z. Liu , L. Gu, Y. Du, W. Huang, H. Zhang, Nat. Chem. 2018, 10, 638.