journal article·2017-05

Single Crystal Flexible Electronics Enabled by 3D Spalling

Ning Li, Stephen Bedell, Huan Hu, Shu‐Jen Han, Xiao Hu Liu, Katherine Saenger, Devendra Sadana

Advanced Materials· Volume 29· Issue 18
Publisher page

Abstract

Flexible and stretchable electronics are becoming increasingly important in many emerging applications. Due to the outstanding electrical properties of single crystal semiconductors, there is great interest in releasing single crystal thin films and fabricating flexible electronics with these conventionally rigid materials. In this study the authors report a universal single crystal layer release process, called “3D spalling,” extending beyond prior art. In contrast to the conventional way of removing blanket layers from their substrates, the new process reported here enables 3D control over the shape and thickness of the removed regions, allowing direct formation of arbitrarily shaped structures of released film and locally specified thickness for each region. As an exemplary demonstration, silicon flexible tactile sensors are fabricated with sensitivities comparable to those of high performance sensors on rigid substrates. Finite element modeling indicates that the size and thickness of the selectively released features can be tuned over a wide range.
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Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Nanowire Synthesis and Applications · Advanced MEMS and NEMS Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

IBM T. J. Watson Research Center 1101 Kitchawan Rd Yorktown Heights NY 10598 USA

References (35)

Show source-provided references
1. 10.1146/annurev-bioeng-071811-15001810.1146/annurev-bioeng-071811-150018 ↗
2. 10.1038/nature1652110.1038/nature16521 ↗
3. 10.1038/nmat283410.1038/nmat2834 ↗
4. 10.1126/science.aaa930610.1126/science.aaa9306 ↗
5. 10.1038/nmat106110.1038/nmat1061 ↗
6. 10.1038/nature0711310.1038/nature07113 ↗
7. 10.1038/nature0249810.1038/nature02498 ↗
8. 10.1016/S1369-7021(07)70016-010.1016/S1369-7021(07)70016-0 ↗
9. 10.1038/nature0711010.1038/nature07110 ↗
10. 10.1038/nnano.2007.15010.1038/nnano.2007.150 ↗
11. 10.1038/nature0771910.1038/nature07719 ↗
12. 10.1021/nn103523t10.1021/nn103523t ↗
13. 10.1038/nature0309010.1038/nature03090 ↗
14. 10.1063/1.296348110.1063/1.2963481 ↗
15. Hu H. · IEEE Sens. Conf. · 2007 · 2007 · 815
16. 10.1038/nmat245910.1038/nmat2459 ↗
17. 10.1126/science.115436710.1126/science.1154367 ↗
18. 10.1063/1.176759110.1063/1.1767591 ↗
19. 10.1109/84.80905510.1109/84.809055 ↗
20. 10.1063/1.220668810.1063/1.2206688 ↗
21. 10.1002/adfm.20060116110.1002/adfm.200601161 ↗
22. 10.1063/1.9894610.1063/1.98946 ↗
23. 10.1038/nature0905410.1038/nature09054 ↗
24. 10.1149/05007.0315ecst10.1149/05007.0315ecst ↗
25. 10.7567/APEX.6.11230110.7567/APEX.6.112301 ↗
26. 10.1002/aenm.20120082710.1002/aenm.201200827 ↗
27. 10.1063/1.368139710.1063/1.3681397 ↗
28. 10.1063/1.496329210.1063/1.4963292 ↗
29. 10.1063/1.493966110.1063/1.4939661 ↗
30. 10.1016/0020-7683(89)90096-610.1016/0020-7683(89)90096-6 ↗
31. 10.1016/0924-4247(91)85017-I10.1016/0924-4247(91)85017-I ↗
32. 10.1038/nmat297110.1038/nmat2971 ↗
33. Huang K. · IEEE Int. Electron Devices Meet. · 2007 · 2007 · 217
34. 10.1002/adma.20030610710.1002/adma.200306107 ↗
35. 10.1016/S1359-6454(98)00345-010.1016/S1359-6454(98)00345-0 ↗