A Noble‐Transition Alloy Excels at Hot‐Carrier Generation in the Near Infrared
Source abstract
Abstract
Abstract Above‐equilibrium “hot”‐carrier generation in metals is a promising route to convert photons into electrical charge for efficient near‐infrared optoelectronics. However, metals that offer both hot‐carrier generation in the near‐infrared and sufficient carrier lifetimes remain elusive. Alloys can offer emergent properties and new design strategies compared to pure metals. Here, it is shown that a noble‐transition alloy, AuxPd1−x, outperforms its constituent metals concerning generation and lifetime of hot carriers when excited in the near‐infrared. At optical fiber wavelengths (e.g., 1550 nm), Au50Pd50 provides a 20‐fold increase in the number of ≈0.8 eV hot holes, compared to Au, and a threefold increase in the carrier lifetime, compared to Pd. The discovery that noble‐transition alloys can excel at hot‐carrier generation reveals a new material platform for near‐infrared optoelectronic devices.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Gordon and Mary Cain Department of Chemical Engineering Louisiana State University Baton Rouge LA 70803 USA
Center for Advanced Microstructures & Devices Louisiana State University Baton Rouge LA 70806 USA
Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA
Department of Chemical and Biological Engineering Drexel University Philadelphia PA 19104 USA
Department of Physics and Astronomy Louisiana State University Baton Rouge LA 70803 USA
Funding
Conselho Nacional de Desenvolvimento Científico e Tecnológico · National Science Foundation · U.S. Department of Energy · Office of Science · Basic Energy Sciences
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