A Graphite‐Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å
Source abstract
Abstract
The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1103/PhysRevB.26.685310.1103/PhysRevB.26.6853 ↗
3. 10.1002/anie.20100659310.1002/anie.201006593 ↗
4. 10.1038/nnano.2007.45110.1038/nnano.2007.451 ↗
5. 10.1038/nnano.2008.21510.1038/nnano.2008.215 ↗
6. 10.1021/ja807449u10.1021/ja807449u ↗
7. 10.1021/ja203725d10.1021/ja203725d ↗
8. 10.1002/anie.20100000910.1002/anie.201000009 ↗
9. Brinker C. J. · 1990 · 788
10. 10.1039/c1jm10460h10.1039/c1jm10460h ↗
11. 10.1021/ja01539a01710.1021/ja01539a017 ↗
12. Tauc J. C. · 1972 · 372
13. 10.1103/PhysRevB.74.07540410.1103/PhysRevB.74.075404 ↗