Electrolyte‐Gated SmCoO₃ Thin‐Film Transistors Exhibiting Thickness‐Dependent Large Switching Ratio at Room Temperature

A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on-state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas-Fermi screening length demonstrates that the SmCoO3-channel electric double layer transistor is the first candidate for a two-dimensional Mott transistor. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.