Fullerene Sensitized Silicon for Near‐ to Mid‐Infrared Light Detection
Source abstract
Abstract
A novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction allows optoelectronic detection in the near- to mid-infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near- to mid-IR, presumably caused by an interfacial absorption mechanism.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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