Mapping of Trap Densities and Hotspots in Pentacene Thin‐Film Transistors by Frequency‐Resolved Scanning Photoresponse Microscopy
Source abstract
Abstract
Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fakultät für Physik 8 CeNS Ludwig‐Maximilians‐Universität München Geschwister‐Scholl‐Platz 1 80539 Munich Germany
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