Strain‐Tunable Superconducting Field‐Effect Transistor with an Organic Strongly‐Correlated Electron System

A novel type of flexible organic field-effect transistor in which strain effects can be finely tuned continuously has been fabricated. In this novel device structure, electronic phases can be controlled both by “band-filling” and by “band-width” continuously. Finally, co-regulation of “band-filling” and “band-width” in the strongly-correlated organic material realize field-induced emergence of superconducting fractions at low temperature. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.