High‐Surface‐Area Mesoporous Germanium from Oxidative Polymerization of the Deltahedral [Ge9]4– Cluster: Electronic Structure Modulation with Donor and Acceptor Molecules
Source abstract
Abstract
A high-surface-area mesoporous germanium is prepared by a new straightforward method that involves oxidative polymerization and no linking agents or external oxidants. The electronic structure of this Ge semiconductor exhibits reversible change towards absorption of various donor and acceptor organic molecules.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Mesoporous Materials and Catalysis · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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