journal article·2002-12-03

(In1xMnx)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Temperature Ferromagnetic Transition

H.C. Jeon, Y.S. Jeong, T.W. Kang, T.W. Kim, K.J. Chung, K.J. Chung, W. Jhe, S.A. Song

Advanced Materials· Volume 14· Issue 23
Publisher page

Abstract

Crystalline InMnAs quantum dots with symmetric single spin domain particles have been formed on GaAs substrates using molecular beam epitaxy. The structural and magnetic properties of the quantum dots are characterized by a variety of techniques. Their magnetization curve as a function of temperature indicates that the ferromagnetic transition temperature is as high as 400 K (see Figure).
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices

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