Position‐Controlled Selective Growth of ZnO Nanorods on Si Substrates Using Facet‐Controlled GaN Micropatterns

ZnO nanorod arrays are selectively grown on Si substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods.