Transparent Organic Thin‐Film Transistor with a Laterally Grown Non‐Planar Phthalocyanine Channel
Source abstract
Abstract
An improved‐performance transparent organic thin‐film transistor (OTFT) is described, which has a vanadyl‐phthalocyanine (VOPc) film as an active p‐channel, lattice‐matched (Sc0.7Y0.3)2O3 film as a high‐k gate dielectric, and atomically flat indium tin oxide (ITO) film as the bottom contact (see Figure). These features—lattice matching and atomic flatness—are expected to lead to further improvements in transparent OTFTs.
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Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Porphyrin and Phthalocyanine Chemistry
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References (26)
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26. We fabricated VOPc films at substrate temperatures of 50 100 150 and 200 °C on the ITO/YSZ substrate. Although the surface morphology of the VOPc films varied with temperature the orientation of all films was independent of temperature i.e. (010) VOPc ∥ (111) ITO. Typical three‐dimensional growth occurred at low temperatures (<150 °C). In addition a rather large domain (∼5 μm) with crack and hole structures was observed when VOPc film was deposited at 200 °C most likely due to the fact that re‐evaporation of VOPc occurred during film growth. Therefore we fixed the substrate temperature at 150 °C.