Solution‐based Fabrication of High‐κ Gate Dielectrics for Next‐Generation Metal‐Oxide Semiconductor Transistors
Source abstract
Abstract
The layer‐by‐layer adsorption of precursor metal alkoxides in solution and post‐annealing at 400 °C affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next‐generation high‐κ gate dielectrics. A void‐free TiO2–La2O3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (42)
Show source-provided references
1. 10.1016/S1369-8001(03)00010-610.1016/S1369-8001(03)00010-6 ↗
2. 10.1038/3502324310.1038/35023243 ↗
3. 10.1063/1.136106510.1063/1.1361065 ↗
4. 10.1109/5.91537310.1109/5.915373 ↗
5. Wallence R. M. · MRS Bull. · 2002 · 27 · 192
6. 10.1063/1.150638810.1063/1.1506388 ↗
7. 10.1557/mrs2002.7110.1557/mrs2002.71 ↗
8. 10.1109/LED.2002.80500010.1109/LED.2002.805000 ↗
9. 10.1143/JJAP.42.L22010.1143/JJAP.42.L220 ↗
10. 10.1063/1.149922310.1063/1.1499223 ↗
11. 10.1063/1.147726610.1063/1.1477266 ↗
12. 10.1143/JJAP.41.239010.1143/JJAP.41.2390 ↗
13. 10.1016/S0040-6090(02)00117-710.1016/S0040-6090(02)00117-7 ↗
14. 10.1126/science.288.5464.31910.1126/science.288.5464.319 ↗
15. 10.1063/1.152830610.1063/1.1528306 ↗
16. 10.1016/S0169-4332(01)00149-010.1016/S0169-4332(01)00149-0 ↗
17. 10.1063/1.151319610.1063/1.1513196 ↗
18. 10.1021/cm970008g10.1021/cm970008g ↗
19. 10.1246/cl.1996.83110.1246/cl.1996.831 ↗
20. 10.1002/(SICI)1521-4095(199805)10:7<535::AID-ADMA535>3.0.CO;2-Q10.1002/(SICI)1521-4095(199805)10:7<535::AID-ADMA535>3.0.CO;2-Q ↗
21. 10.1246/cl.2002.74210.1246/cl.2002.742 ↗
22. 10.1023/A:101006161277210.1023/A:1010061612772 ↗
23. 10.1021/nl025565310.1021/nl0255653 ↗
24. 10.1063/1.141282310.1063/1.1412823 ↗
25. 10.1109/55.62491110.1109/55.624911 ↗
26. 10.1116/1.58921410.1116/1.589214 ↗
27. 10.1063/1.136233110.1063/1.1362331 ↗
28. 10.1063/1.149365710.1063/1.1493657 ↗
29. N. Bonanos B. C. H. Steele E. P. Butler Impedance Spectroscopy(Ed: J. R. Macdonald) John Wiley & Sons New York1987 Ch. 4.
30. 10.1038/377215a010.1038/377215a0 ↗
31. 10.1149/1.183739910.1149/1.1837399 ↗
32. 10.1063/1.37157610.1063/1.371576 ↗
33. 10.1063/1.35622710.1063/1.356227 ↗
34. 10.1063/1.12193010.1063/1.121930 ↗
35. 10.1143/JJAP.38.681210.1143/JJAP.38.6812 ↗
36. 10.1063/1.12405810.1063/1.124058 ↗
37. 10.1063/1.140994510.1063/1.1409945 ↗
38. 10.1002/adma.20030480610.1002/adma.200304806 ↗
39. 10.1063/1.37211310.1063/1.372113 ↗
40. Taylor C. J. · J. Am. Chem. Soc. · 1999 · 121 · 5222
41. 10.1002/(SICI)1521-3862(199801)04:01<9::AID-CVDE9>3.0.CO;2-310.1002/(SICI)1521-3862(199801)04:01<9::AID-CVDE9>3.0.CO;2-3 ↗
42. 10.1016/S0038-1101(99)00031-310.1016/S0038-1101(99)00031-3 ↗