High‐Quality Ultra‐Fine GaN Nanowires Synthesized Via Chemical Vapor Deposition
Source abstract
Abstract
GaN nanowires with diameters in the quantum‐confinement size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH3 in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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