DataVXAdvanced MaterialsPaper
journal article·2023-09Open access

Water‐Induced Bandgap Engineering in Nanoribbons of Hexagonal Boron Nitride

Chen Chen, Yang Hang, Hui Shan Wang, Yang Wang, Xiujun Wang, Chengxin Jiang, Yu Feng, Chenxi Liu, Eli Janzen, James H. Edgar, Zhipeng Wei, Wanlin Guo, Weida Hu, Zhuhua Zhang, Haomin Wang, Xiaoming Xie

Advanced Materials· Volume 35· Issue 36
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Source abstract

Abstract

Abstract Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It is predicted that a transverse electric field can narrow the bandgap and even cause an insulator–metal transition in BNNRs. However, experimentally introducing an overhigh electric field across the BNNR remains challenging. Here, it is theoretically and experimentally demonstrated that water adsorption greatly reduces the bandgap of zigzag‐oriented BNNRs (zBNNRs). Ab initio calculations show that water molecules can be favorably assembled within the trench between two adjacent BNNRs to form a polar ice layer, which induces a transverse equivalent electric field of over 2 V nm−1 accounting for the bandgap reduction. Field‐effect transistors are successfully fabricated from zBNNRs with different widths. The conductance of water‐adsorbed zBNNRs can be tuned over 3 orders in magnitude via modulation of the equivalent electrical field at room temperature. Furthermore, photocurrent response measurements are taken to determine the optical bandgaps of zBNNRs with water adsorption. The zBNNR with increased width can exhibit a bandgap down to 1.17 eV. This study offers fundamental insights into new routes toward realizing electronic/optoelectronic devices and circuits based on hexagonal boron nitride.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials

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Affiliations

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 China

Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education State Key Laboratory of Mechanics and Control for Aerospace Structures and Institute for Frontier Science Nanjing University of Aeronautics and Astronautics Nanjing 210016 China

State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China

Tim Taylor Department of Chemical Engineering Kansas State University Manhattan KS 66506 USA

State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 China

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality · China Postdoctoral Science Foundation · Natural Science Foundation of Jiangsu Province

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