Coexistence and Interplay of Two Ferroelectric Mechanisms in Zn_1‐xMg_xO

Abstract Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric‐semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal‐oxide‐semiconductor technology. Recent discoveries of ferroelectricity in binary oxides such as Zn_1‐xMg_xO and Hf_1‐xZr_xO have been a focal point of research in ferroelectric information technology. This work investigates the ferroelectric properties of Zn_1‐xMg_xO utilizing automated band excitation piezoresponse force microscopy. This findings reveal the coexistence of two ferroelectric subsystems within Zn_1‐xMg_xO. A “fringing‐ridge mechanism” of polarization switching is proposed that is characterized by initial lateral expansion of nucleation without significant propagation in depth, contradicting the conventional domain growth process observed in ferroelectrics. This unique polarization dynamics in Zn_1‐xMg_xO suggests a new understanding of ferroelectric behavior, contributing to both the fundamental science of ferroelectrics and their application in information technology.