Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors
Source abstract
Abstract
A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Graphene research and applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
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