DataVXAdvanced MaterialsPaper
journal article·2023-06

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Chuanju Wang, Xiangming Xu, Shubham Tyagi, Paresh C. Rout, Udo Schwingenschlögl, Biplab Sarkar, Vishal Khandelwal, Xinke Liu, Linfei Gao, Mohamed Nejib Hedhili, Husam N. Alshareef, Xiaohang Li

Advanced Materials· Volume 35· Issue 22
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Source abstract

Abstract

Abstract Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off‐state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off‐state drain breakdown voltage of 1085 V, and a near‐ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide‐bandgap semiconductor devices.
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Research context

Electronic materials

OpenAlex topics: MXene and MAX Phase Materials · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Semiconductor Laboratory King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

Physical Science and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

Department of Electronics & Communication Engineering IIT Roorkee Roorkee Uttarakhand 247667 India

College of Materials Science and Engineering Shenzhen Key Laboratory of Microscale Optical Information Technology Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University 3688 Nanhai Ave Shenzhen 518060 P. R. China

Core Laboratories King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

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