High‐Throughput Scanning Second‐Harmonic‐Generation Microscopy for Polar Materials
Source abstract
Abstract
Abstract The Materials Genome Initiative aims to discover, develop, manufacture, and deploy advanced materials at twice the speed of conventional approaches. To achieve this, high‐throughput characterization is essential for the rapid screening of candidate materials. In this study, a high‐throughput scanning second‐harmonic‐generation microscope with automatic partitioning, accurate positioning, and fast scanning is developed that can rapidly probe and screen polar materials. Using this technique, typical ferroelectrics, including periodically poled lithium niobate crystals and PbZr 0.2 Ti 0.8 O 3 (PZT) thin films are first investigated, whereby the microscopic domain structures are clearly revealed. This technique is then applied to a compositional‐gradient (100− x )%BaTiO 3 − x %SrTiO 3 film and a thickness‐gradient PZT film to demonstrate its high‐throughput capabilities. Since the second‐harmonic‐generation signal is correlated with the macroscopic remnant polarization over the probed region determined by the laser spot, it is free of artifacts arising from leakage current and electrostatic interference, while materials’ symmetries and domain structures must be carefully considered in the data analysis. It is believed that this work can help promote the high‐throughput development of polar materials and contribute to the Materials Genome Initiative.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Photorefractive and Nonlinear Optics · Photoacoustic and Ultrasonic Imaging
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 P. R. China
Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology Shenzhen Guangdong 518055 P. R. China
Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen Guangdong 518055 P. R. China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
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