journal article·2024-08

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Maguang Zhu, Huimin Yin, Jiang Cao, Lin Xu, Peng Lu, Yang Liu, Li Ding, Chenwei Fan, Haiyang Liu, Yuanfang Zhang, Yizheng Jin, Lian‐Mao Peng, Chuanhong Jin, Zhiyong Zhang

Advanced Materials· Volume 36· Issue 33
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Abstract

Abstract Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field‐effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n‐type field‐effect transistor for constructing complementary metal–oxide–semiconductor electronics. Most importantly, a quasi‐broken‐gap (BG) heterojunction tunnel field‐effect transistor (TFET) is first demonstrated based on an individual partial‐filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec−1 with a high on‐state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi‐BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high‐performance and ultralow power consumption integrated circuits.
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Research context

OpenAlex topics: Ga2O3 and related materials · Perovskite Materials and Applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐based Electronics School of Electronics Peking University Beijing 100871 China

School of Integrated Circuits Nanjing University Suzhou Jiangsu 210023 China

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China

Institute of Microelectronics Chinese Academy of Science Beijing 100029 China

State Key Laboratory of Silicon and Advanced Semiconductor Materials Key Laboratory of Excited‐State Materials of Zhejiang Province Department of Chemistry Zhejiang University Hangzhou 310027 China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Fundamental Research Funds for the Central Universities · Jihua Laboratory

References (52)

Show source-provided references
1. 10.1038/nature1250210.1038/nature12502 ↗
2. 10.1126/science.aaj162810.1126/science.aaj1628 ↗
3. 10.1038/s41928-020-0465-110.1038/s41928-020-0465-1 ↗
4. 10.1002/adma.20170706810.1002/adma.201707068 ↗
5. 10.1126/science.aaz257010.1126/science.aaz2570 ↗
6. 10.1126/science.aba598010.1126/science.aba5980 ↗
7. 10.1002/adma.20220406610.1002/adma.202204066 ↗
8. 10.1038/nature0479610.1038/nature04796 ↗
9. 10.1038/nature0618110.1038/nature06181 ↗
10. 10.1038/s41586-021-03472-910.1038/s41586-021-03472-9 ↗
11. 10.1038/nmat445210.1038/nmat4452 ↗
12. 10.1038/s41586-023-05819-w10.1038/s41586-023-05819-w ↗
13. 10.1038/s41586-023-05797-z10.1038/s41586-023-05797-z ↗
14. 10.1038/s41928-019-0330-210.1038/s41928-019-0330-2 ↗
15. 10.1126/science.290.5496.155210.1126/science.290.5496.1552 ↗
16. 10.1021/acsnano.2c1000710.1021/acsnano.2c10007 ↗
17. 10.1038/s41586-019-1493-810.1038/s41586-019-1493-8 ↗
18. 10.1021/acsnano.7b0086110.1021/acsnano.7b00861 ↗
19. 10.1021/nn100745a10.1021/nn100745a ↗
20. 10.1016/j.physe.2003.11.19710.1016/j.physe.2003.11.197 ↗
21. 10.1021/acsnano.2c0164710.1021/acsnano.2c01647 ↗
22. 10.1021/acsnano.1c0370510.1021/acsnano.1c03705 ↗
23. 10.1021/ja810086g10.1021/ja810086g ↗
24. 10.1002/adma.20220857510.1002/adma.202208575 ↗
25. a)S. O.Koswatta S. J.Koester W.Haensch presented at2009 IEEE Int. Electron Devices Meeting (IEDM) Baltimore MD USA December2009;
26. 10.1109/TED.2010.207925010.1109/TED.2010.2079250 ↗
27. 10.1038/nature1538710.1038/nature15387 ↗
28. 10.1038/4082710.1038/40827 ↗
29. 10.1021/jacs.9b1137010.1021/jacs.9b11370 ↗
30. 10.1021/nl050862410.1021/nl0508624 ↗
31. 10.1038/nmat186510.1038/nmat1865 ↗
32. a)K.Tomioka M.Yoshimura T.Fukui presented at2012 Symp. VLSI Technology (VLSIT) Honolulu HI USA June 2012;
33. 10.1038/s41928-019-0364-510.1038/s41928-019-0364-5 ↗
34. 10.1016/j.nantod.2021.10126310.1016/j.nantod.2021.101263 ↗
35. 10.1038/s41565-018-0348-z10.1038/s41565-018-0348-z ↗
36. 10.1038/s41467-022-33770-310.1038/s41467-022-33770-3 ↗
37. 10.1126/science.aap919510.1126/science.aap9195 ↗
38. 10.1038/s41565-017-0010-110.1038/s41565-017-0010-1 ↗
39. 10.1021/acs.nanolett.7b0158410.1021/acs.nanolett.7b01584 ↗
40. 10.1021/acsenergylett.0c0129510.1021/acsenergylett.0c01295 ↗
41. 10.1021/acsenergylett.2c0255110.1021/acsenergylett.2c02551 ↗
42. 10.1038/ncomms1370310.1038/ncomms13703 ↗
43. 10.1109/TNANO.2015.242631610.1109/TNANO.2015.2426316 ↗
44. 10.1109/55.6305010.1109/55.63050 ↗
45. 10.1016/j.sse.2022.10849910.1016/j.sse.2022.108499 ↗
46. b)G.Gandus J.Cao T.Agarwal M.Luisier Y.Lee presented at2022 Int. Electron Devices Meeting (IEDM) San Francisco CA USA December2022;
47. c)J. B. L.Deuschle M.Luisier J.Cao presented atInt. Conf. Simulation Semiconductor Processes Devices (SISPAD) Kobe Japan September2023.
48. 10.1039/D0MH02029J10.1039/D0MH02029J ↗
49. S.Natarajan M.Agostinelli S.Akbar M.Bost A.Bowonder V.Chikarmane S.Chouksey A.Dasgupta K.Fischer Q.Fu T.Ghani M.Giles S.Govindaraju R.Grover W.Han D.Hanken E.Haralson M.Haran M.Heckscher R.Heussner P.Jain R.James R.Jhaveri I.Jin H.Kam E.Karl C.Kenyon M.Liu Y.Luo R.Mehandru et al. presented at2014 IEEE Int. Electron Devices Meeting San Francisco CA USA December2014.
50. 10.1038/s41928-022-00849-010.1038/s41928-022-00849-0 ↗
51. 10.1038/s41565-019-0623-710.1038/s41565-019-0623-7 ↗
52. C. T.Koch Ph.D. Thesis Arizona State University2002.