Perovskite Light‐Emitting Diode Display Based on MoS₂ Backplane Thin‐Film Transistors

Abstract The uniform deposition of perovskite light‐emitting diodes (PeLEDs) and their integration with backplane thin‐film transistors (TFTs) remain challenging for large‐area display applications. Herein, an active‐matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS₂)‐based TFTs is presented. The single‐source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS₂ TFTs to fabricate an active‐matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next‐generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems.