journal article·2023-07

Engineering Amorphous–Crystallized Interface of ZrNx Barriers for Stable Inverted Perovskite Solar Cells

Mengqi Xiao, Guizhou Yuan, Ziheng Lu, Jing Xia, Dong Li, Ying Chen, Ying Zhang, Fengtao Pei, Changli Chen, Yang Bai, Tinglu Song, Jie Dou, Yujing Li, Yihua Chen, Zipeng Xu, Xiaoyan Yang, Zelong Liu, Xingyu Liu, Cheng Zhu, Qi Chen

Advanced Materials· Volume 35· Issue 30
Publisher page

Abstract

Abstract It is challenging to achieve long‐term stability of perovskite solar cells due to the corrosion and diffusion of metal electrodes. Integration of compact barriers into devices has been recognized as an effective strategy to protect the perovskite absorber and electrode. However, the difficulty is to construct a thin layer of a few nanometers that can delay ion migration and impede chemical reactions simultaneously, in which the delicate microstructure design of a stable material plays an important role. Herein, ZrNx barrier films with high amorphization are introduced in p–i–n perovskite solar cells. To quantify the amorphous–crystalline (a–c) density, pattern recognition techniques are employed. It is found the decreasing a–c interface in an amorphous film leads to dense atom arrangement and uniform distribution of chemical potential, which retards the interdiffusion at the interface between ions and metal atoms and protect the electrodes from corrosion. The resultant solar cells exhibit improved operational stability, which retains 88% of initial efficiency after continuous maximum power point tracking under 1‐Sun illumination at room temperature (25 °C) for 1500 h.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications MIIT Key Laboratory for Low‐dimensional Quantum Structure and Devices Experimental Center of Advanced Materials School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China

Department of Materials Science and Metallurgy University of Cambridge Cambridge CB3 0FS UK

Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China

Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China

State Key Laboratory of Explosion Science and Technology Beijing Institute of Technology Beijing 100081 China

Funding

National Natural Science Foundation of China

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