Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy
Source abstract
Abstract
Abstract The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin‐information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof‐of‐concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced. With the spatially uniform control of magnetic anisotropy, the shape and topology of a skyrmion when passing the controlled area can be maintained. The findings will open a new route toward the design and realization of skyrmion‐based spintronic devices in the near future.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Magnetic Field Sensors Techniques · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Quantum Spin Team Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea
Department of Physics Pusan National University Busan 46241 Republic of Korea
Division of Quantum Phases and Devices Department of Physics Konkuk University Seoul 05029 Republic of Korea
Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Funding
National Research Foundation of Korea
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