Selective Remanent Ambipolar Charge Transport in Polymeric Field‐Effect Transistors For High‐Performance Logic Circuits Fabricated in Ambient
Source abstract
Abstract
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Organic Electronics Department of Science and Technology Linköping University SE‐601 74 Norrköping Sweden
Polyera Corporation 8045 Lamon Avenue Skokie IL 60077 USA
Department of Materials Science and Nanotechnology Engineering Abdullah Gül University 38039 Kayseri Turkey
Department of Electrical Engineering Linköping University S‐581 83 Linköping Sweden
References (42)
Show source-provided references
1. 10.1021/cm102419z10.1021/cm102419z ↗
2. 10.1021/ar200208g10.1021/ar200208g ↗
3. 10.1021/cr000013v10.1021/cr000013v ↗
4. 10.1002/adma.20130428010.1002/adma.201304280 ↗
5. 10.1038/nmat106110.1038/nmat1061 ↗
6. 10.1021/cr900150b10.1021/cr900150b ↗
7. 10.1038/nature0772710.1038/nature07727 ↗
8. 10.1038/nmat161210.1038/nmat1612 ↗
9. 10.1038/nmat365510.1038/nmat3655 ↗
10. 10.1002/adfm.20050042410.1002/adfm.200500424 ↗
11. 10.1002/aenm.20130140910.1002/aenm.201301409 ↗
12. 10.1002/adma.20110452210.1002/adma.201104522 ↗
13. 10.1021/ja809555c10.1021/ja809555c ↗
14. 10.1002/adma.20110261910.1002/adma.201102619 ↗
15. 10.1002/adma.20120101410.1002/adma.201201014 ↗
16. 10.1002/adma.20100297310.1002/adma.201002973 ↗
17. 10.1002/adma.20110278610.1002/adma.201102786 ↗
18. 10.1021/ar200006r10.1021/ar200006r ↗
19. 10.1002/adma.20120536110.1002/adma.201205361 ↗
20. 10.1002/adma.20050216410.1002/adma.200502164 ↗
21. 10.1039/B919596C10.1039/B919596C ↗
22. 10.1002/adma.20130231510.1002/adma.201302315 ↗
23. 10.1021/am200705j10.1021/am200705j ↗
24. 10.1002/adma.20120533010.1002/adma.201205330 ↗
25. 10.1002/adma.20120146410.1002/adma.201201464 ↗
26. 10.1038/nmat213710.1038/nmat2137 ↗
27. 10.1002/adma.20090075910.1002/adma.200900759 ↗
28. 10.1002/adma.20060256410.1002/adma.200602564 ↗
29. 10.1038/nmat132910.1038/nmat1329 ↗
30. 10.1021/am404494h10.1021/am404494h ↗
31. 10.1016/j.orgel.2010.02.01210.1016/j.orgel.2010.02.012 ↗
32. 10.1002/adma.20130227810.1002/adma.201302278 ↗
33. 10.1002/adma.20050056110.1002/adma.200500561 ↗
34. Ng T. N. · J. Appl. Phys. · 2009 · 106 · 5
35. 10.1063/1.9207610.1063/1.92076 ↗
36. 10.1063/1.271385610.1063/1.2713856 ↗
37. 10.1016/j.orgel.2012.08.03810.1016/j.orgel.2012.08.038 ↗
38. 10.1002/adma.20090355910.1002/adma.200903559 ↗
39. 10.1016/j.synthmet.2008.03.01610.1016/j.synthmet.2008.03.016 ↗
40. 10.1021/nl202399310.1021/nl2023993 ↗
41. 10.1016/j.orgel.2011.08.01910.1016/j.orgel.2011.08.019 ↗
42. 10.1038/srep0058510.1038/srep00585 ↗