DataVXAdvanced MaterialsPaper
journal article·2023-11

Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm 2 V −1 s −1

Xincan Qiu, Jiangnan Xia, Yu Liu, Ping‐An Chen, Lanyu Huang, Huan Wei, Jiaqi Ding, Zhenqi Gong, Xi Zeng, Chengyuan Peng, Chen Chen, Xiao Wang, Lang Jiang, Lei Liao, Yuanyuan Hu

Advanced Materials· Volume 35· Issue 44
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Source abstract

Abstract

Abstract Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here, ambient‐stable high‐performance FETs based on 2D Dion–Jacobson phase tin halide perovskite BDASnI 4 , which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH 4 SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm 2 V −1 s −1 and an on/off ratio surpassing 10 6 . Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

Key Laboratory of Hunan Province for 3D Scene Visualization and Intelligence Education (2023TP1038) School of Electronic Information Hunan First Normal University Changsha 410205 China

Shenzhen Research Institute of Hunan University Shenzhen 518063 China

International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics Hunan University Changsha 410082 China

School of Physics and Electronics Hunan University Changsha 410082 China

Science and Technology on Advanced Ceramic Fibers and Composites Laboratory College of Aerospace Science and Engineering National University of Defense Technology Changsha 410000 China

Beijing National Laboratory for Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Hunan Province · Shenzhen Science and Technology Innovation Program

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