Spatially Resolved Polarization Manipulation of Ferroelectricity in Twisted hBN

Ming Lv; Xinzuo Sun; Yan Chen; Takashi Taniguchi; Kenji Watanabe; Menghao Wu; Jianlu Wang; Jiamin Xue

doi:10.1002/adma.202203990

journal article·2022-12

Spatially Resolved Polarization Manipulation of Ferroelectricity in Twisted hBN

Ming Lv, Xinzuo Sun, Yan Chen, Takashi Taniguchi, Kenji Watanabe, Menghao Wu, Jianlu Wang, Jiamin Xue

Advanced Materials· Volume 34· Issue 51

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Source abstract

Abstract

Abstract Robust room‐temperature interfacial ferroelectricity has been formed in the 2D limit by simply twisting two atomic layers of non‐ferroelectric hexagonal boron nitride (hBN). A thorough understanding of this newly discovered ferroelectric system is required. Here, twisted hBN is used as a tunneling junction and it is studied at the nanometer scale using conductive atomic force microscopy. Three properties unique to this system are discovered. First, the polarization dependence of the tunneling resistance contrasts with the conventional theory. Second, the ferroelectric domains can be controlled using mechanical stress, highlighting the original meaning of the emergent “slidetronics”. Third, ferroelectric hysteresis is highly spatially dependent. The hysteresis is symmetric at the domain walls. A few nanometers away, the hysteresis shifts completely to the positive or negative side, depending on the original polarization. These findings reveal the unconventional ferroelectricity in this 2D system.

Source: crossref · Quality: baseline

Research context

Nanomaterials Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · 2D Materials and Applications · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology ShanghaiTech University Pudong Shanghai 201210 China

Shanghai Institute of Technical Physics Chinese Academy of Sciences Hongkou Shanghai 200083 China

Frontier Institute of Chip and System Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai 200438 China

International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan Hubei 430074 China

Funding

Fudan University · National Basic Research Program of China · National Natural Science Foundation of China · Ministry of Education, Culture, Sports, Science and Technology · Japan Society for the Promotion of Science

References (34)

Show source-provided references

1. 10.1038/nature2615410.1038/nature26154 ↗

2. 10.1038/nature2616010.1038/nature26160 ↗

3. 10.1126/science.aav191010.1126/science.aav1910 ↗

4. 10.1126/science.aaw378010.1126/science.aaw3780 ↗

5. 10.1021/acsnano.7b0275610.1021/acsnano.7b02756 ↗

6. 10.1103/PhysRevB.103.12542710.1103/PhysRevB.103.125427 ↗

7. 10.1038/s41699-021-00221-410.1038/s41699-021-00221-4 ↗

8. 10.1103/PhysRevLett.105.04680110.1103/PhysRevLett.105.046801 ↗

9. 10.1038/s41565-020-0708-310.1038/s41565-020-0708-3 ↗

10. 10.1126/science.abd323010.1126/science.abd3230 ↗

11. 10.1038/s41467-021-26072-710.1038/s41467-021-26072-7 ↗

12. 10.1038/s41467-020-20667-210.1038/s41467-020-20667-2 ↗

13. 10.1126/science.abe817710.1126/science.abe8177 ↗

14. 10.1038/s41467-020-20428-110.1038/s41467-020-20428-1 ↗

15. 10.1007/s11467-022-1175-010.1007/s11467-022-1175-0 ↗

16. 10.1038/s41565-022-01072-w10.1038/s41565-022-01072-w ↗

17. 10.1038/s41467-021-25587-310.1038/s41467-021-25587-3 ↗

18. 10.1002/adma.20210587910.1002/adma.202105879 ↗

19. 10.1038/s41565-021-01059-z10.1038/s41565-021-01059-z ↗

20. 10.1021/acsnano.0c0848310.1021/acsnano.0c08483 ↗

21. 10.1002/adma.20190412310.1002/adma.201904123 ↗

22. 10.1016/S0304-8853(98)00266-210.1016/S0304-8853(98)00266-2 ↗

23. 10.1021/acs.nanolett.5b0526310.1021/acs.nanolett.5b05263 ↗

24. 10.1063/1.236298410.1063/1.2362984 ↗

25. 10.1021/acs.nanolett.1c0421010.1021/acs.nanolett.1c04210 ↗

26. 10.1103/PhysRevLett.94.24680210.1103/PhysRevLett.94.246802 ↗

27. 10.1103/PhysRevB.72.12534110.1103/PhysRevB.72.125341 ↗

28. Ashcroft N. W. · 1976

29. 10.1103/PhysRevLett.108.11740110.1103/PhysRevLett.108.117401 ↗

30. Ashcroft N. W. · 1976

31. 10.1038/nmat414810.1038/nmat4148 ↗

32. 10.1063/1.494180510.1063/1.4941805 ↗

33. 10.1103/PhysRevLett.124.20610110.1103/PhysRevLett.124.206101 ↗

34. 10.1103/PhysRevB.99.19541410.1103/PhysRevB.99.195414 ↗