In Situ Surface Reconstruction toward Planar Heterojunction for Efficient and Stable FAPbI3 Quantum Dot Solar Cells
Source abstract
Abstract
Abstract Pure‐phase α‐FAPbI3 quantum dots (QDs) are the focus of an increasing interest in photovoltaics due to their superior ambient stability, large absorption coefficient, and long charge‐carrier lifetime. However, the trap states induced by the ligand‐exchange process limit the photovoltaic performances. Here, a simple post treatment using methylamine thiocyanate is developed to reconstruct the FAPbI3‐QD film surface, in which a MAPbI3 capping layer with a thickness of 6.2 nm is formed on the film top. This planar perovskite heterojunction leads to a reduced density of trap‐states, a decreased band gap, and a facilitated charge carrier transport. As a result, a record high power conversion efficiency (PCE) of 16.23% with negligible hysteresis is achieved for the FAPbI3 QD solar cell, and it retains over 90% of the initial PCE after being stored in ambient environment for 1000 h.
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Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Frontiers Science Center for Flexible Electronics (FSCFE) Institute of Flexible Electronics (IFE) Ningbo Institute of Northwestern Polytechnical University Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 P. R. China
Department of Physics Chair for Functional Materials TUM School of Natural Sciences Technical University of Munich James‐Franck‐Str. 1 85748 Garching Germany
Heinz Maier‐Leibnitz Zentrum (MLZ) Technical University of Munich Lichtenbergstr. 1 85748 Garching Germany
Funding
National Natural Science Foundation of China · China Scholarship Council · Deutsche Forschungsgemeinschaft · Fundamental Research Funds for the Central Universities
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