Bipolar Modulation in a Self‐Powered Ultra‐Wide Photodetector Based on Bi2Se3/AlInAsSb Heterojunction for Wavelength‐Sensitive Imaging and Encrypted Optical Communication
Source abstract
Abstract
Abstract Broadband photodetectors (PDs) have garnered significant attention due to their ability to detect optical signals across a wide wavelength range, with applications spanning military reconnaissance, environmental monitoring, and medical imaging. However, existing broadband detectors face several practical challenges, including limited detection range, uneven photoresponse, and difficult to distinguish multispectral signals. To address these limitations, this study presents a self‐powered ultra‐wide PD based on the Bi2Se3/AlInAsSb heterojunction. The device can detect signals across a wide wavelength range from 250 nm to 1900 nm, exhibiting outstanding optoelectronic performance with a maximum responsivity of 0.5 A W−1, a detectivity of 4.2 × 1012 Jones, a switching ratio of 1.1 × 104, and an external quantum efficiency of 71.4%. Furthermore, the detector achieves a detectivity greater than 1010 Jones across the entire broadband range, significantly improving photoresponse uniformity. Notably, due to the differential band alignment of the two materials across spectral ranges, this detector exhibits a photocurrent polarity reversal in the 650–680 nm range. Leveraging its broadband and bipolar characteristics, this PD successfully enables secure information encryption in communication systems. This study significantly advances broadband PD technology, enhancing its practical uses and introducing innovative solutions for secure communications, thus strengthening communication security and confidentiality.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Photonic and Optical Devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China
Key Laboratory of Optoelectronic Materials and Devices Institute of semiconductors Chinese Academy of Sciences Beijing 100083 China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
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