journal article·2023-09

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6

Jiachao Zhou, Anzhe Chen, Yishu Zhang, Dong Pu, Baoshi Qiao, Jiayang Hu, Hanxi Li, Shuai Zhong, Rong Zhao, Fei Xue, Yang Xu, Kian Ping Loh, Hua Wang, Bin Yu

Advanced Materials· Volume 35· Issue 38
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Abstract

Abstract The recently unfolded ferroionic phenomena in 2D van der Waals (vdW) copper–indium–thiophosphate (CuInP2S6 or CIPS) have received widespread interest as they allow for dynamic control of conductive switching properties, which are appealing in the paradigm‐shift computing. The intricate couplings between ferroelectric polarization and ionic conduction in 2D vdW CIPS facilitate the manipulation and dynamic control of conductive behaviors. However, the complex interplays and underlying mechanisms are not yet fully explored and understood. Here, by investigating polarization switching and ionic conduction in the temperature and applied electric field domains, it is discovered that the conducting mechanisms of CIPS can be divided into four distinctive states (or modes) with transitional boundaries, depending on the dynamics of Cu ions in the material. Further, it demonstrates that dynamically‐tunable synaptic responsive behavior can be well implemented by governing the working‐state transition. This research provides an in‐depth, quantitative understanding of the complex phenomena of conductive switching in 2D vdW CIPS with coexisting ferroelectric order and ionic disorder. The developed insights in this work lay the ground for implementing high‐performance, function‐enriched devices for information processing, data storage, and neuromorphic computing based on the 2D ferroionic material systems.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Micro‐Nano Electronics Zhejiang University Hangzhou 310027 China

ZJU‐Hangzhou Global Scientific and Technological Innovation Center Hangzhou 310027 China

Joint Institute of Zhejiang University and the University of Illinois at Urbana‐Champaign Zhejiang University Haining 314400 China

Guangdong Institute of Intelligence Science and Technology Hengqin Zhuhai 519031 China

Center for Brain‐Inspired Computing Research Tsinghua University Beijing 100084 China

Department of Applied Physics Hong Kong Polytechnic University Hung Hom Hong Kong SAR China

Funding

National Natural Science Foundation of China · Fundamental Research Funds for the Central Universities · Hong Kong Polytechnic University

References (53)

Show source-provided references
1. 10.1021/acs.nanolett.7b0219810.1021/acs.nanolett.7b02198 ↗
2. 10.1126/science.aad860910.1126/science.aad8609 ↗
3. Liu F. C. · Nat. Commun. · 2016 · 7 · 6
4. 10.1126/science.112956410.1126/science.1129564 ↗
5. 10.1126/science.109250810.1126/science.1092508 ↗
6. 10.1103/PhysRevB.60.83610.1103/PhysRevB.60.836 ↗
7. 10.3367/UFNe.0184.201406d.064510.3367/UFNe.0184.201406d.0645 ↗
8. 10.1038/s41565-019-0602-z10.1038/s41565-019-0602-z ↗
9. 10.1126/sciadv.aax022010.1126/sciadv.aax0220 ↗
10. 10.1021/acs.nanolett.9b0018010.1021/acs.nanolett.9b00180 ↗
11. 10.1021/cm00045a01610.1021/cm00045a016 ↗
12. 10.1103/PhysRevB.56.1086010.1103/PhysRevB.56.10860 ↗
13. Li B. C. · Adv. Electron. Mater. · 2020 · 6 · 7
14. 10.1038/s41928-020-0441-910.1038/s41928-020-0441-9 ↗
15. 10.1021/acsami.0c1379910.1021/acsami.0c13799 ↗
16. 10.1038/s41467-021-27710-w10.1038/s41467-021-27710-w ↗
17. 10.1039/C9MH01215J10.1039/C9MH01215J ↗
18. 10.1103/PhysRevB.95.19541310.1103/PhysRevB.95.195413 ↗
19. 10.1038/nphys410310.1038/nphys4103 ↗
20. 10.1002/adfm.20160059010.1002/adfm.201600590 ↗
21. 10.1016/0022-0248(91)90205-J10.1016/0022-0248(91)90205-J ↗
22. 10.1021/acs.nanolett.0c0402310.1021/acs.nanolett.0c04023 ↗
23. 10.1038/s41563-019-0532-z10.1038/s41563-019-0532-z ↗
24. 10.1038/nmat364910.1038/nmat3649 ↗
25. 10.1038/ncomms528910.1038/ncomms5289 ↗
26. 10.1021/nn101950n10.1021/nn101950n ↗
27. 10.1080/0015019990826055110.1080/00150199908260551 ↗
28. 10.1039/D0TC01620A10.1039/D0TC01620A ↗
29. 10.1007/s11467-020-0986-010.1007/s11467-020-0986-0 ↗
30. Sze S. M. · 2021
31. 10.1063/1.361048610.1063/1.3610486 ↗
32. Chang Y. F. · J. Appl. Phys. · 2014 · 116 · 12
33. Wang H. · 2D Mater. · 2017 · 4 · 10
34. 10.1103/PhysRevB.79.14412410.1103/PhysRevB.79.144124 ↗
35. W.Wang E.Covi Y.‐H.Lin E.Ambrosi D.Ielmini presented at2019 IEEE International Electron Devices Meeting (IEDM) San Francisco CA USA December2019.
36. 10.1126/science.125464210.1126/science.1254642 ↗
37. 10.1038/482456a10.1038/482456a ↗
38. 10.1021/acsami.2c0833510.1021/acsami.2c08335 ↗
39. 10.1126/science.275.5297.22110.1126/science.275.5297.221 ↗
40. 10.1146/annurev.physiol.64.092501.11454710.1146/annurev.physiol.64.092501.114547 ↗
41. 10.1002/andp.1860187111410.1002/andp.18601871114 ↗
42. 10.1126/science.110289610.1126/science.1102896 ↗
43. 10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗
44. 10.1016/S0361-9230(99)00161-610.1016/S0361-9230(99)00161-6 ↗
45. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
46. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
47. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
48. 10.1103/PhysRevA.38.309810.1103/PhysRevA.38.3098 ↗
49. 10.1002/jcc.2049510.1002/jcc.20495 ↗
50. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
51. 10.1063/1.132967210.1063/1.1329672 ↗
52. 10.1103/PhysRevB.47.165110.1103/PhysRevB.47.1651 ↗
53. 10.1103/RevModPhys.66.89910.1103/RevModPhys.66.899 ↗