journal article·2020-06

Honeycomb RhI3 Flakes with High Environmental Stability for Optoelectronics

Fakun Wang, Zhuang Zhang, Yue Zhang, Anmin Nie, Wei Zhao, Dong Wang, Fuqiang Huang, Tianyou Zhai

Advanced Materials· Volume 32· Issue 25
Publisher page

Abstract

Abstract The emerging 2D layered transition metal trihalides (MX3) have attracted extremely high interest given their exceptional structural and physical properties. Continuing to extend the library of 2D MX3 is essential for exploring new physical phenomena and enabling new functionality. Herein, the optical and electrical properties and the photodetection behavior of atomically thin RhI3 flakes exfoliated from bulk crystals are reported. This compound exhibits superior air and thermal stability, as well as thickness‐dependent bandgap from 1.1 (18L) to 1.4 eV (2L). Field‐effect transistors based on the few‐layer RhI3 flakes display n‐type semiconducting behavior with competitive mobility of 2.5 cm2 V−1 s−1 and ON/OFF current ratio of 4 × 104. Importantly, the outstanding responsivity of 11.5 A W−1 and high specific detectivity of 2 × 1010 Jones are recorded from the RhI3 photodetectors under 980 nm illumination at room temperature in air. These findings indicate a variety of potential applications of atomically thin RhI3 flakes in future 2D‐material‐based electronic and optoelectronic devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Material Processing and Die and Mould Technology School of Material Sciences and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China

State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

Center for High Pressure Science (CHiPS) State Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao 066004 P. R. China

State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China

Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 P. R. China

Funding

Fundamental Research Funds for the Central Universities · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China

References (49)

Show source-provided references
1. 10.3390/cryst705012110.3390/cryst7050121 ↗
2. 10.1093/nsr/nww02610.1093/nsr/nww026 ↗
3. 10.1038/nmat460410.1038/nmat4604 ↗
4. 10.1002/adma.20180807410.1002/adma.201808074 ↗
5. 10.1021/acs.nanolett.8b0092610.1021/acs.nanolett.8b00926 ↗
6. 10.1021/acs.nanolett.9b0252310.1021/acs.nanolett.9b02523 ↗
7. 10.1038/s41567-017-0006-710.1038/s41567-017-0006-7 ↗
8. 10.1143/JPSJ.15.166410.1143/JPSJ.15.1664 ↗
9. 10.1021/ic00060a02510.1021/ic00060a025 ↗
10. 10.1021/acs.nanolett.6b0070110.1021/acs.nanolett.6b00701 ↗
11. 10.1016/j.jmmm.2018.12.03210.1016/j.jmmm.2018.12.032 ↗
12. 10.1038/nature2239110.1038/nature22391 ↗
13. 10.1126/science.aar485110.1126/science.aar4851 ↗
14. 10.1021/acs.nanolett.8b0113110.1021/acs.nanolett.8b01131 ↗
15. 10.1038/s41467-018-04953-810.1038/s41467-018-04953-8 ↗
16. 10.1149/1.209601410.1149/1.2096014 ↗
17. 10.1039/C8NR04667K10.1039/C8NR04667K ↗
18. 10.1021/acs.chemmater.9b0181810.1021/acs.chemmater.9b01818 ↗
19. 10.1016/j.nanoso.2019.10032410.1016/j.nanoso.2019.100324 ↗
20. 10.1002/admi.20190141010.1002/admi.201901410 ↗
21. RhI3crystal structure https://materials.springer.com/isp/crystallographic/docs/sd_0541773(accessed: September2019).
22. 10.1002/inf2.1200510.1002/inf2.12005 ↗
23. 10.1021/acsanm.9b0005810.1021/acsanm.9b00058 ↗
24. 10.31635/ccschem.019.2019001210.31635/ccschem.019.20190012 ↗
25. 10.1038/s41586-019-1445-310.1038/s41586-019-1445-3 ↗
26. 10.1002/adfm.20180078510.1002/adfm.201800785 ↗
27. 10.1103/PhysRevB.98.10430710.1103/PhysRevB.98.104307 ↗
28. 10.1103/PhysRevB.98.08540610.1103/PhysRevB.98.085406 ↗
29. 10.1039/C5NR07205K10.1039/C5NR07205K ↗
30. 10.1002/adma.20180454110.1002/adma.201804541 ↗
31. 10.1021/nn100393710.1021/nn1003937 ↗
32. 10.1002/adfm.20110211110.1002/adfm.201102111 ↗
33. 10.1063/1.487186010.1063/1.4871860 ↗
34. 10.1021/acs.jpcc.6b1205910.1021/acs.jpcc.6b12059 ↗
35. 10.1021/acsnano.7b0486010.1021/acsnano.7b04860 ↗
36. 10.1021/nl071033g10.1021/nl071033g ↗
37. 10.1039/C5NR07401K10.1039/C5NR07401K ↗
38. 10.1021/jacs.7b0486510.1021/jacs.7b04865 ↗
39. 10.1038/nnano.2014.3510.1038/nnano.2014.35 ↗
40. 10.1002/adfm.20180258110.1002/adfm.201802581 ↗
41. 10.1002/adma.20110479810.1002/adma.201104798 ↗
42. Grundmann M. · 2016 · 23810.1007/978-3-319-23880-7 ↗
43. 10.1002/adma.20130124410.1002/adma.201301244 ↗
44. 10.1002/adfm.20180270710.1002/adfm.201802707 ↗
45. 10.1021/acs.nanolett.5b0252310.1021/acs.nanolett.5b02523 ↗
46. 10.1002/adfm.20170101110.1002/adfm.201701011 ↗
47. 10.1002/smll.20190134710.1002/smll.201901347 ↗
48. 10.1021/acs.nanolett.5b0255910.1021/acs.nanolett.5b02559 ↗
49. 10.1002/anie.20151203810.1002/anie.201512038 ↗