DataVXAdvanced MaterialsPaper
journal article·2015-11

A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan‐I Ho, Mohamed Boutchich, Ching‐Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, Laurent Montes, Chao‐Sung Lai

Advanced Materials· Volume 27· Issue 41
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Source abstract

Abstract

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Engineering Chang Gung University Kwei‐Shan, Tao‐Yuan 333 Taiwan

GeePs, CNRS UMR8507 CentraleSupelec, Univ Paris‐Sud Sorbonne Universités‐UPMC Univ Paris 06 11 Rue Joliot‐Curie, Plateau de Moulon Gif‐sur‐Yvette 91192 CEDEX France

Graduate Institute of Energy Engineering National Central University Jhongli City Taoyuan County 32001 Taiwan

Department of Electronic Engineering Polytechnic of Turin Corso Duca degli Abruzzi 24 10129 Torino Italy

Grenoble INP‐Phelma Université Grenoble Alpes 3 Parvis Louis Néel, BP 257 38016 Grenoble CEDEX 01 France

IMEP‐LAHC Grenoble INP Minatec, BP 257 38016 Grenoble France

Funding

Ministère des Affaires Etrangères · Centre National de la Recherche Scientifique · French National Research Agency

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