Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors

Abstract 2D semiconductors, such as molybdenum disulfide (MoS₂), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy‐efficient electronics. However, the development of large‐scale ICs based on 2D materials is still in its early stage, mainly due to the non‐uniformity of the individual devices and little investigation of device and circuit‐level optimization. Herein, a 4‐inch high‐quality monolayer MoS₂ film is successfully synthesized, which is then used to fabricate top‐gated (TG) MoS₂ field‐effect transistors with wafer‐scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass‐transistor logic configuration based on pseudo‐NMOS is then employed to design more complex MoS₂ logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer‐scale 2D semiconductors for application in complex ICs.