Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro‐Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H‐SiC

Abstract Silicon carbide (SiC), one of the third‐generation semiconductor materials with excellent electrical and optoelectronic properties, is ideal for high light‐sensing performance. Here, a self‐powered SiC ultraviolet (UV) photodetector (PD) is constructed with wider applicability and higher commercialization potential. The great performance of the PD is realized by a remarkable photoinduced dynamic Schottky effect derived from the symbiotic modulation of Schottky and Ohmic contact. Using the pyro‐phototronic effect that exists in the N‐doped 4H‐SiC single crystal PDs, a fast pyroelectric response time of 0.27 s is achieved, which is almost ten times shorter than that obtained from the steady‐state signal under UV illumination. The maximal transient photoresponsivity reaches 9.12 nA mW⁻¹, which is ≈20% higher than the conventional photoelectric signal. Moreover, different regions of the 4H‐SiC centimeter‐scale chip output distinct signals under UV illumination, demonstrating efficient optical imaging and information transmission capabilities of this device. This work not only reveals the fundamental optoelectronic physics lying in this vital third‐generation semiconductor, but also sheds light on its potential photosensing applications for large‐scale commercialization.