2D Ferroic Materials for Nonvolatile Memory Applications
Source abstract
Abstract
Abstract The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high‐speed, low‐power, and high‐density memory in the field of integrated circuits. Long‐range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Artificial Micro‐ and Nano‐Structures of Ministry of Education and School of Physics and Technology Wuhan University Wuhan 430072 China
Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material Physics Ministry of Education School of Physics Zhengzhou University Zhengzhou 450052 China
Hubei Luojia Laboratory Wuhan 430079 China
Wuhan Institute of Quantum Technology Wuhan 430206 China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100190 China
Funding
National Basic Research Program of China · National Natural Science Foundation of China
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