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journal article·2024-08Open access

Vapor Deposition of Bilayer 3R MoS2 with Room‐Temperature Ferroelectricity

Hanjun Jiang, Lei Li, Yao Wu, Ruihuan Duan, Kongyang Yi, Lishu Wu, Chao Zhu, Lei Luo, Manzhang Xu, Lu Zheng, Xuetao Gan, Wu Zhao, Xuewen Wang, Zheng Liu

Advanced Materials· Volume 36· Issue 32
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Abstract

Abstract Two‐dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high‐density integration of non‐volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h‐BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non‐twisted homo‐bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room‐temperature out‐of‐plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse‐flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room‐temperature ferroelectricity of CVD‐grown MoS2 will proceed with the potential wafer‐scale integration of 2D TMDs in the logic circuit.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE) Northwestern Polytechnical University Xi'an 710072 P. R. China

School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

Shaanxi Key Laboratory of Flexible Electronics (KLoFE) Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 China

MIIT Key Laboratory of Flexible Electronics (KLoFE) Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 China

Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 China

School of Information Science and Technology Northwest University Xi'an Shaanxi 710127 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Shaanxi Province · Fundamental Research Funds for the Central Universities · Northwestern Polytechnical University · China Scholarship Council

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