DataVXAdvanced MaterialsPaper
journal article·2023-02Open access

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Wanying Li, Yimeng Guo, Zhaoping Luo, Shuhao Wu, Bo Han, Weijin Hu, Lu You, Kenji Watanabe, Takashi Taniguchi, Thomas Alava, Jiezhi Chen, Peng Gao, Xiuyan Li, Zhongming Wei, Lin‐Wang Wang, Yue‐Yang Liu, Chengxin Zhao, Xuepeng Zhan, Zheng Vitto Han, Hanwen Wang

Advanced Materials· Volume 35· Issue 5
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Source abstract

Abstract

Abstract Ferroelectricity, one of the keys to realize non‐volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate‐tunable ferroelectric vdW memristive device, which holds promises in future multi‐bit data storage applications, remains challenging. Here, a gate‐programmable multi‐state memory is shown by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal(M)‐ferroelectric(FE)‐semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE‐memristor (with ON–OFF ratios exceeding 105 and long‐term retention) and metal‐oxide‐semiconductor field effect transistor (MOS‐FET). Thus, it yields a prototype of gate tunable giant electroresistance with multi‐levelled ON‐states in the FE‐memristor in the vertical vdW assembly. First‐principles calculations further reveal that such behaviors originate from the specific band alignment between the FE‐S interface. Our findings pave the way for the engineering of ferroelectricity‐mediated memories in future implementations of 2D nanoelectronics.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Advanced Memory and Neural Computing · Perovskite Materials and Applications · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 P. R. China

School of Material Science and Engineering University of Science and Technology of China Anhui 230026 P. R. China

School of Information Science and Engineering (ISE) Shandong University Qingdao 266000 P. R. China

International Center for Quantum Materials and Electron Microscopy Laboratory School of Physics, Peking University Beijing 100871 P. R. China

School of Physical Science and Technology Jiangsu Key Laboratory of Thin Films Soochow University Suzhou 215006 P. R. China

Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Université Grenoble Alpes CEA, LETI Grenoble 38000 France

State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China

Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 P. R. China

School of Nuclear Science and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China

Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 P. R. China

State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto‐Electronics Shanxi University Taiyuan 030006 P. R. China

Funding

National Natural Science Foundation of China

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