Black‐Phosphorus‐Based Orientation‐Induced Diodes

Abstract Despite many decades of research of diodes, which are fundamental components of electronic and photoelectronic devices with p–n or Schottky junctions using bulk or 2D materials, stereotyped architectures and complex technological processing (doping and multiple material operations) have limited future development. Here, a novel rectification device, an orientation‐induced diode, assembled using only few‐layered black phosphorus (BP) is investigated. The key to its realization is to utilize the remarkable anisotropy of BP in low dimensions and change the charge‐transport conditions abruptly along the different crystal orientations. Rectification ratios of 6.8, 22, and 115 can be achieved in cruciform BP, cross‐stacked BP junctions, and BP junctions stacked with vertical orientations, respectively. The underlying physical processes and mechanisms can be explained using “orientation barrier” band theory. The theoretical results are experimentally confirmed using localized scanning photocurrent imaging. These orientation‐induced optoelectronic devices open possibilities for 2D anisotropic materials with a new degree of freedom to improve modulation in diodes.