Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors
Source abstract
Abstract
Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus‐guided coating method. Using this method, the charge carrier mobility of C8‐benzothieno[3,2‐b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole‐based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial‐charge‐transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π‐electrons to the pore wall.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nanopore and Nanochannel Transport Studies · Organic Electronics and Photovoltaics · Fuel Cells and Related Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical and Biomolecular Engineering University of Illinois Urbana‐Champaign 600 S. Mathews Ave. Urbana IL 61801 USA
Beijing National Laboratory for Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
Funding
University of Illinois · U.S. Department of Energy
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