Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices
Source abstract
Abstract
Abstract Ever since the invention of solid‐state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi‐valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal–oxide–semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, the recent achievements toward the development of compact MVL unit devices are reviewed. First, basic principles of MVL technologies are introduced by describing methods of obtaining multiple logic states and discussing radix‐related aspects of MVL computation. Next, MVL unit devices are classified and overviewed with emphasis on principles of operation, technologies, and applications. Finally, a comparative discussion of strengths and weaknesses is provided for each class of MVL devices, and the review concludes with the outlook for the MVL field.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Low-power high-performance VLSI design · VLSI and Analog Circuit Testing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Korea
Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440‐746 Korea
Memory Technology Design Team Samsung Electronics Co. Ltd Hwasung 18448 Korea
SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Korea
Funding
National Research Foundation of Korea
References (100+)
Show source-provided references
1. 10.1109/JSSC.1974.105051110.1109/JSSC.1974.1050511 ↗
2. Bohr M. T. · 1995 · 24110.1109/IEDM.1995.499187 ↗
3. Magen N. · 2004 · 7
4. 10.1109/TC.1981.167586010.1109/TC.1981.1675860 ↗
5. 10.1109/TC.1984.167639210.1109/TC.1984.1676392 ↗
6. 10.2307/237032410.2307/2370324 ↗
7. Lukasiewicz J. · Ruch Filoz. · 1920 · 5 · 170
8. 10.1109/PGEC.1963.26359610.1109/PGEC.1963.263596 ↗
9. 10.1007/BF0103847610.1007/BF01038476 ↗
10. Hurst S. L. · 1988 · 16410.1109/ISMVL.1988.5170 ↗
11. 10.1038/s41586-018-0008-310.1038/s41586-018-0008-3 ↗
12. 10.1002/adma.20180107910.1002/adma.201801079 ↗
13. 10.1039/D1TC00148E10.1039/D1TC00148E ↗
14. 10.1002/advs.20200421610.1002/advs.202004216 ↗
15. 10.1109/T-ED.1987.2321510.1109/T-ED.1987.23215 ↗
16. Baba T. · 1997 · 41
17. 10.1109/TVLSI.2012.219824810.1109/TVLSI.2012.2198248 ↗
18. Takahashi Y. · 2000 · 411
19. 10.1038/ncomms1341310.1038/ncomms13413 ↗
20. 10.1038/nnano.2017.20810.1038/nnano.2017.208 ↗
21. 10.1002/adma.20210124310.1002/adma.202101243 ↗
22. 10.1038/s41928-019-0272-810.1038/s41928-019-0272-8 ↗
23. 10.1038/s41467-019-09998-x10.1038/s41467-019-09998-x ↗
24. 10.1016/j.mejo.2015.09.01810.1016/j.mejo.2015.09.018 ↗
25. 10.1117/12.797377510.1117/12.7973775 ↗
26. 10.1109/81.24232110.1109/81.242321 ↗
27. Miller D. M. · 2007
28. 10.1021/acs.nanolett.5b0479110.1021/acs.nanolett.5b04791 ↗
29. 10.1002/adma.20180826510.1002/adma.201808265 ↗
30. 10.1021/acsami.8b0048310.1021/acsami.8b00483 ↗
31. 10.7567/1347-4065/aaffbb10.7567/1347-4065/aaffbb ↗
32. 10.1038/srep3935310.1038/srep39353 ↗
33. 10.1021/acs.nanolett.8b0135710.1021/acs.nanolett.8b01357 ↗
34. 10.1021/acs.jpcc.8b0001510.1021/acs.jpcc.8b00015 ↗
35. 10.1021/acs.nanolett.1c0294710.1021/acs.nanolett.1c02947 ↗
36. 10.1109/55.68910.1109/55.689 ↗
37. 10.1109/55.19280110.1109/55.192801 ↗
38. 10.1039/C9NH00631A10.1039/C9NH00631A ↗
39. 10.1109/4.12734510.1109/4.127345 ↗
40. Lin H. C. · 1994 · 188
41. 10.1109/4.65862910.1109/4.658629 ↗
42. 10.1002/smll.20180488510.1002/smll.201804885 ↗
43. 10.1002/smll.20210147510.1002/smll.202101475 ↗
44. 10.1002/adfm.20200943610.1002/adfm.202009436 ↗
45. 10.1063/1.489295010.1063/1.4892950 ↗
46. 10.1063/1.280207410.1063/1.2802074 ↗
47. 10.1039/C8NR09674K10.1039/C8NR09674K ↗
48. 10.1021/nn300308610.1021/nn3003086 ↗
49. 10.1109/55.49184010.1109/55.491840 ↗
50. 10.35848/1347-4065/abd69d10.35848/1347-4065/abd69d ↗
51. 10.1109/TNANO.2005.84700810.1109/TNANO.2005.847008 ↗
52. 10.1063/1.497921310.1063/1.4979213 ↗
53. 10.1021/acsami.9b2004110.1021/acsami.9b20041 ↗
54. 10.1021/acsnano.9b0020110.1021/acsnano.9b00201 ↗
55. 10.1039/D0NH00163E10.1039/D0NH00163E ↗
56. 10.1088/1361-6528/ac49c210.1088/1361-6528/ac49c2 ↗
57. 10.1038/s41699-021-00213-410.1038/s41699-021-00213-4 ↗
58. 10.1016/j.orgel.2021.10615710.1016/j.orgel.2021.106157 ↗
59. 10.1021/acsnano.7b0263510.1021/acsnano.7b02635 ↗
60. 10.1021/acsnano.1c0076210.1021/acsnano.1c00762 ↗
61. 10.1002/aelm.20200094010.1002/aelm.202000940 ↗
62. 10.1021/acsnano.9b0001410.1021/acsnano.9b00014 ↗
63. 10.1088/1361-6641/ab843a10.1088/1361-6641/ab843a ↗
64. 10.1002/adfm.20190554010.1002/adfm.201905540 ↗
65. 10.1021/acsami.0c1773910.1021/acsami.0c17739 ↗
66. 10.1038/s41598-017-11393-910.1038/s41598-017-11393-9 ↗
67. 10.35848/1882-0786/ac122f10.35848/1882-0786/ac122f ↗
68. 10.1002/smll.20210336510.1002/smll.202103365 ↗
69. 10.1021/acsami.9b1877210.1021/acsami.9b18772 ↗
70. 10.1016/j.apsusc.2021.15239610.1016/j.apsusc.2021.152396 ↗
71. 10.1002/aelm.20190120010.1002/aelm.201901200 ↗
72. 10.1002/adfm.20190372410.1002/adfm.201903724 ↗
73. 10.1021/acsami.0c0970610.1021/acsami.0c09706 ↗
74. 10.1038/s41699-020-0149-810.1038/s41699-020-0149-8 ↗
75. 10.1002/adfm.20190964510.1002/adfm.201909645 ↗
76. 10.1063/1.510922110.1063/1.5109221 ↗
77. 10.1002/aelm.20180041610.1002/aelm.201800416 ↗
78. 10.1038/s41467-022-29756-w10.1038/s41467-022-29756-w ↗
79. 10.1002/aelm.20200042610.1002/aelm.202000426 ↗
80. 10.1109/TED.2015.244582310.1109/TED.2015.2445823 ↗
81. Shin S. · 2017 · 284
82. Ko J. · 2021 · 189
83. 10.1109/TED.2020.301138410.1109/TED.2020.3011384 ↗
84. 10.1109/JEDS.2021.305745610.1109/JEDS.2021.3057456 ↗
85. 10.1109/TED.2021.310661810.1109/TED.2021.3106618 ↗
86. 10.1109/TED.2020.301718610.1109/TED.2020.3017186 ↗
87. 10.1109/LED.2021.313922510.1109/LED.2021.3139225 ↗
88. 10.1002/aelm.20210024710.1002/aelm.202100247 ↗
89. Jain F. C. · 2007
90. 10.1049/mnl.2015.020010.1049/mnl.2015.0200 ↗
91. Kim S. Y. · 2019 · 25
92. 10.1007/BF0068346910.1007/BF00683469 ↗
93. 10.1103/PhysRevLett.59.10910.1103/PhysRevLett.59.109 ↗
94. 10.1109/5.75251810.1109/5.752518 ↗
95. 10.1038/s41467-017-00442-610.1038/s41467-017-00442-6 ↗
96. Zhang W. C. · 2009 · 337
97. Akazawa M. · IEICE Trans. Electron. · 1999 · 82 · 1607
98. 10.1109/TED.2002.80842110.1109/TED.2002.808421 ↗
99. 10.1109/TNANO.2005.85860210.1109/TNANO.2005.858602 ↗
100. 10.1063/1.142108510.1063/1.1421085 ↗