Rationally Designed Single‐Crystalline Nanowire Networks
Source abstract
Abstract
Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics Eindhoven University of Technology P. O. Box 513 5600 MB Eindhoven The Netherlands
Philips Innovation Services Eindhoven High Tech Campus 11 5656AE Eindhoven The Netherlands
Kavli Institute of Nanoscience Delft University of Technology 2628CJ Delft The Netherlands
CNRS, LAAS 7 avenue du Colonel Roche F‐31400 Toulouse France
Univ. Toulouse, LAAS F‐31400 Toulouse France
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