DataVXAdvanced MaterialsPaper
journal article·2019-07

Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Yi Rang Lim, Jin Kyu Han, Yeoheung Yoon, Jae‐Bok Lee, Cheolho Jeon, Min Choi, Hyunju Chang, Noejung Park, Jung Hwa Kim, Zonghoon Lee, Wooseok Song, Sung Myung, Sun Sook Lee, Ki‐Seok An, Jong‐Hyun Ahn, Jongsun Lim

Advanced Materials· Volume 31· Issue 29
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Source abstract

Abstract

Abstract Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large‐scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x )Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic‐level substitution combined with a solution‐based large‐area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large‐scale 2D TMD alloys are implemented. Se‐stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure‐phase MoS2 and MoSe2, are unambiguously achieved.
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Research context

Metals & alloysNanomaterialsElectronic materialsCatalysis & surfaces

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Thin Film Materials Research Center Korea Research Institute of Chemical Technology 141 Gajeong‐ro Yuseong‐gu Daejeon 34114 Republic of Korea

School of Electrical and Electronic Engineering Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 03722 Republic of Korea

Department of Energy Conversion and Storage Technical University of Denmark Frederiksborgvej 399 4000 Roskilde Denmark

Nano‐Surface Research Group Korea Basic Science Institute Daejeon 302‐333 Republic of Korea

Center of Molecular Modeling and Simulation Korea Research Institute of Chemical Technology 141 Gajeong‐ro Yuseong‐gu Daejeon 34114 Republic of Korea

Department of Chemistry Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 Republic of Korea

Department of Physics Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 Republic of Korea

School of Material Science and Engineering Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 Republic of Korea

Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 Republic of Korea

Funding

Ministry of Science, ICT and Future Planning · Ministry of Trade, Industry and Energy

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