journal article·2021-11

Soft Ferroelectrics Enabling High‐Performance Intelligent Photo Electronics

Chanho Park, Kyuho Lee, Min Koo, Cheolmin Park

Advanced Materials· Volume 33· Issue 47
Publisher page

Abstract

Abstract Soft ferroelectrics based on organic and organic–inorganic hybrid materials have gained much interest among researchers owing to their electrically programmable and remnant polarization. This allows for the development of numerous flexible, foldable, and stretchable nonvolatile memories, when combined with various crystal engineering approaches to optimize their performance. Soft ferroelectrics have been recently considered to have an important role in the emerging human‐connected electronics that involve diverse photoelectronic elements, particularly those requiring precise programmable electric fields, such as tactile sensors, synaptic devices, displays, photodetectors, and solar cells for facile human–machine interaction, human safety, and sustainability. This paper provides a comprehensive review of the recent developments in soft ferroelectric materials with an emphasis on their ferroelectric switching principles and their potential application in human‐connected intelligent electronics. Based on the origins of ferroelectric atomic and/or molecular switching, the soft ferroelectrics are categorized into seven subgroups. In this review, the efficiency of soft ferroelectrics with their distinct ferroelectric characteristics utilized in various human‐connected electronic devices with programmable electric field is demonstrated. This review inspires further research to utilize the remarkable functionality of soft electronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Advanced Sensor and Energy Harvesting Materials · Dielectric materials and actuators

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Yonsei University Yonsei‐ro 50, Seodaemun‐gu Seoul 03722 Republic of Korea

Funding

National Research Foundation of Korea

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