Intermediate‐Adduct‐Assisted Growth of Stable CsPbI₂Br Inorganic Perovskite Films for High‐Efficiency Semitransparent Solar Cells

Abstract Thanks to the tunable bandgap and excellent photoelectric characteristics, perovskites have been widely used in semitransparent solar cells (ST‐SCs). Most works present unsatisfactory power conversion efficiencies (PCEs) through reducing the thickness of the perovskite films because there is a trade‐off between PCE and average visible transmittance (AVT). As a consequence, most PCEs are less than 12% when the AVT is higher than 20% due to the limited voltage (V_oc) and short‐circuit current (J_sc). Herein, a strategy of intermediate adduct (IMAT) engineering is developed to improve the film quality of the inorganic perovskite CsPbI₂Br, which is a challenging issue to limit its performance of efficiency and stability. A normal n–i–p‐structured PSC based on the optimal CsPbI₂Br film delivers a PCE of 16.02% with excellent stability. Furthermore, through optimizing the electrode type and interface, the ST‐PSC shows a high V_oc larger than 1.2 V and the PCE reaches 14.01% and 10.36% under an AVT of 31.7% and 40.9%, respectively. This is the first demonstration of a CsPbI₂Br ST‐PSC, and it outperforms most of other types of perovskites.