Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films
Source abstract
Abstract
A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment – commonly used in classic semiconductor materials – is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering University of California Berkeley, Berkeley CA 94720 USA
Materials Science Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Radiant Technologies, Inc 2835 Pan American Fwy., Ste. B/C Albuquerque NM 87107 USA
Funding
National Science Foundation · Air Force Office of Scientific Research · Army Research Office
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