High‐Performance Solution‐Processed 2D P‐Type WSe ₂ Transistors and Circuits through Molecular Doping

Abstract Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces enables the implementation of high‐performance devices on form‐free substrates by cost‐effective and scalable printing processes. However, the lack of solution‐processed p‐type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br ₂ is reported to enhance the hole mobility by orders of magnitude for p‐type transistors with 2D layered materials. Br ₂ ‐doped WSe ₂ transistors show a field‐effect hole mobility of more than 27 cm ² V ⁻¹ s ⁻¹ , and a high on/off current ratio of ≈10 ⁷ , and exhibits excellent operational stability during the on‐off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p‐type WSe ₂ and n‐type MoS ₂ layered films are demonstrated with an ultra‐high gain of 1280 under a driving voltage ( V _DD ) of 7 V. This work unveils the high potential of solution‐processed 2D semiconductors with low‐temperature processability for flexible devices and monolithic circuitry.